MCH6602 no.6445-1/5 features low on-resistance. ultrahigh-speed switching. 1.5v drive. composite type with 2 mosfets contained in a single package, facilitating high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 10 v drain current (dc) i d 0.35 a drain current (pulse) i dp pw 10 s, duty cycle 1% 1.4 a allowable power dissipation p d mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg - -55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =80ma 0.15 0.22 s r ds (on)1 i d =80ma, v gs =4v 2.9 3.7 ? static drain-to-source on-state resistance r ds (on)2 i d =40ma, v gs =2.5v 3.7 5.2 ? r ds (on)3 i d =10ma, v gs =1.5v 6.4 12.8 ? input capacitance ciss v ds =10v, f=1mhz 7.0 pf output capacitance coss v ds =10v, f=1mhz 5.9 pf reverse transfer capacitance crss v ds =10v, f=1mhz 2.3 pf marking : fb continued on next page. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en6445b any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. 12407 ti im tc-00000415 / 70306 / 42806pe ms im tb-00002288 / 30300 ts (koto) ta-2509 sanyo semiconductors d ata sheet MCH6602 n-channel silicon mosfet general-purpose switching device applications
MCH6602 no.6445-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit t urn-on delay time t d (on) see specified test circuit. 19 ns rise time t r see specified test circuit. 65 ns t urn-off delay time t d (off) see specified test circuit. 155 ns fall time t f see specified test circuit. 120 ns t otal gate charge qg v ds =10v, v gs =10v, i d =150ma 1.58 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =150ma 0.26 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =150ma 0.31 nc diode forward voltage v sd i s =150ma, v gs =0v 0.87 1.2 v package dimensions electrical connection unit : mm 7022a-006 switching time test circuit 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 sanyo : mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 654 123 654 123 pw=10 s d.c. ) 1% 4v 0v v in v in p. g 50 1 g s i d =80ma r l =187.5 1 v dd =15v v out d MCH6602 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 t op view 654 123
MCH6602 no.6445-3/5 r ds (on) -- i d r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- 1 static drain-to-source on-state resistance, r ds (on) -- 1 gate-to-source voltage, v gs -- v drain current, i d -- a r ds (on) -- ta y fs -- i d r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- 1 drain current, i d -- a r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- 1 drain current, i d -- a drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- 1 ambient temperature, ta -- c forward transfer admittance, y fs -- s - -60 0 - -40 --20 1 020 2 40 60 3 4 5 6 7 80 100 120 140 160 i d =40ma, v gs =2.5v i d =80ma, v gs =4.0v 0.01 0.01 0.1 23 57 23 5 0.1 7 5 3 2 7 5 3 2 1.0 v ds =10v 75 c t a= --25 c it00035 it00036 0.01 0.1 23 57 23 5 10 1.0 7 5 3 2 v gs =2.5v 1.0 0.001 0.01 23 57 23 5 100 10 7 5 3 2 7 5 3 2 v gs =1.5v ta=75 c 25 c - -25 c - -25 c 25 c ta=75 c it00033 it00034 25 c 0 0 12 1 34 2 56 3 4 5 6 7 8 9 10 78910 ta=25 c 0.01 0.1 23 57 23 5 10 7 5 3 2 1.0 25 c - -25 c ta=75 c it00031 it00032 v gs =4v i d =40ma 80ma i d -- v ds i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a 0 0 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 v gs =1.5v 2.0v 2.5v 4.0v 3.5v 3.0v 6.0v 0 0 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 v ds =10v t a= --25 c 25 c 75 c it00029 it00030
MCH6602 no.6445-4/5 2 3 2 3 5 7 2 3 5 7 1.0 0.1 0.01 0204 060 100 120 140 0 80 1.0 0.6 0.4 0.2 0.8 160 it0 1118 23 57 23 5 1.0 10 it0 1117 i d =0.35a i dp =1.4a 100ms dc operation 10ms 1ms pw ) 10 s operation in this area is limited by r ds (on). 0246810121 4161820 1.0 10 7 5 3 2 7 5 3 2 100 ciss coss crss f=1mhz 00.20.40 .6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 9 10 v ds =10v i d =150ma it00039 it00040 v gs -- qg t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v p d -- ta a s o drain-to-source voltage, v ds -- v drain current, i d -- a t a=25 c single pulse mounted on a ceramic board (900mm 2 0.8mm) 1unit ambient temperature, ta -- c allowable power dissipation, p d -- w mounted on a ceramic board (900mm 2 0.8mm) 1unit ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf sw time -- i d drain current, i d -- a switching time, sw time -- ns i s -- v sd diode forward voltage, v sd -- v source current, i s -- a 0.01 0.6 0.5 0.8 0.7 0.9 1.0 1.1 1.2 0.1 1.0 7 5 3 2 7 5 3 2 v gs =0v - -25 c 25 c ta=75 c 0.01 10 0.1 23 57 2 1000 100 7 5 3 2 7 5 3 2 v dd =15v v gs =4v t d (on) t r t f t d (off) it00037 it00038
MCH6602 no.6445-5/5 specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ps note on usage : since the MCH6602 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. this catalog provides information as of january, 2007. specifications and information herein are subject to change without notice.
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